| 摘要 |
PURPOSE:To improve transfer efficiency by connecting a CTG to a first transfer electrode TG1', forming potential barrier regions in channel regions under the CTG, a TG1 and a TG1' and shaping potential well regions under second transfer electrodes TG2, TG2'. CONSTITUTION:A transfer electrode 2 for connection is arranged adjoined to a TG2, the signal charges of a vertical CCD3 are transferred vertically to a channel region under the TG2, and a transfer electrode CTG for connection is shaped on the upstream sides of the TG2 and a TG2'. Clock voltage V1' is applied to the CTG, a TG1' and the TG2', clock voltage V2 to a TG3, a TG3' and a TG4, a TG4' and clock voltage V1'' to a TG1 and the TG2 and the transfer electrode 2 for connection. Potential barrier regions are shaped in channel regions under the TG1, the TG1', the CTG, the TG3, and TGs 3', 2, and potential well regions are formed in channel regions under the TG2, the TG2', the TG4 and the TGs 4', 3 shaped onto the transfer electrode as a first layer through an insulating film. Accordingly, most signal charges are transferred to the first potential well region and the first potential barrier region, thus improving transfer efficiency, then reducing transfer noises. |
