| 发明名称 |
Method of forming current confinement channels in semiconductor devices |
| 摘要 |
Semiconductor light emitting devices, lasers and LEDs, are described in which the current flow channel is narrower near the top surface of the device and wider at its bottom near the active region. Also, described are several attenuation masks for fabricating the channels of these devices by particle bombardment.
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| 申请公布号 |
US4514896(A) |
申请公布日期 |
1985.05.07 |
| 申请号 |
US19840571386 |
申请日期 |
1984.01.17 |
| 申请人 |
AT&T BELL LABORATORIES |
发明人 |
DIXON, RICHARD W.;JOYCE, WILLIAM B.;KOSZI, LOUIS A.;MILLER, RICHARD C.;SCHWARTZ, BERTRAM |
| 分类号 |
H01L33/00;H01L33/24;H01S5/20;H01S5/22;(IPC1-7):H01L21/265 |
主分类号 |
H01L33/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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