发明名称 ALIGNMENT PATTERN
摘要 PURPOSE:To generate general purpose alignment pattern and transfer it with high accuracy by providing, in the side of mask, the contour figure wherein the L-shaped patterns in different sizes are arranged proportionally and symmetrically. CONSTITUTION:A plurality of contour figures 12 are sequentially formed proportionally and symmetrically to the internal circumference from the external circumference with the scaling and then apertures are formed. Thereby, a pattern image 11 for alignment of masks 1 formed like a letter L. This shape corresponds to the pattern image for alignment of substrate 2 formed in different size indicated by the dotted line and alignment can be realized easily at a high speed. When the pattern image 14 where apertures 15 are radially formed is used, the overlapped pattern portions are reduced, making easier the alignment.
申请公布号 JPS6077421(A) 申请公布日期 1985.05.02
申请号 JP19830186150 申请日期 1983.10.05
申请人 FUJITSU KK 发明人 HOSHINO HITOSHI;FUNATSU TSUNEO
分类号 G03F9/00;H01L21/027;H01L21/30;(IPC1-7):H01L21/30 主分类号 G03F9/00
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