| 摘要 |
PURPOSE:To obtain a magnetoresistance device which has sufficiently small saturated magnetic field and large magnetic sensitive characteristic by forming a folded linear pattern using a ferromagnetic thin film having 510-90Angstrom of thickness on an insulating substrate, connecting conductor electrodes at the terminals of both ends, and covering the entire surface with passivation film from the electrodes to the resistor. CONSTITUTION:A thin magnetic film having 510-90Angstrom of thickness is deposited with Ni/Co alloy of ferromagnetic material as a resistor 12 on an insulating substrate 11. At this time, the thin magnetic film is formed in a folded linear pattern by etching as a resistor 12 in which these lines are connected in series. Then, conductor electrodes 13, 14 are connected to both ends of the resistor, and a passivation film 15 is adhered from the end surfaces of the electrodes 13, 14 to the entire surface of the resistor 12. Thus, the magnitude of the saturated magnetic field can be sufficiently reduced, and the magnetic sensitive characteristic can be sufficiently increased. |
