| 摘要 |
PURPOSE:To increase the action margin of a magnetic bubble memory element by using a ''Permalloy'' transfer element to form a pattern at a junction part where the magnetic bubbles are shifted to an ion implantation transfer path from a ''Permalloy'' transfer path and at the same time putting the end part of the ''Permalloy'' transfer element into a place near a cusp of the ion implantation transfer path. CONSTITUTION:A connection ''Permalloy'' pattern 12 formed within an ion implantation area 11a has a deformed half disk shape. The end part 13a of the pattern 12 has an oblong form and magnetizes a counter magnetic field with a slightly high intensity so as to get over easily the top of a potential produced at a boundary 4b between a non-ion implanted area and an ion implanted area. The bubble adsorbing power is reduced at the final termination 13b owing to an interaction with the area 11a. Thus the magnetic bubbles can be shifted smoothly toward an intensive charged wall of a cusp 14. |
