| 摘要 |
PURPOSE:To enable the titled device to have the function of logical product operation, and to enable the electrical control of the oscillation wavelength by a method wherein a plurality of active regions are made independent of each other in an electrical manner, and made to couple each other in an optical manner, resulting in arrangement in the axial directon of the resonator. CONSTITUTION:An N type Ga1-xAlxAs layer 2, an N type Ga1-xAlxAs layer 3, and N-type Ga1-xAlxAs layer 4, a P type Ga1-xAlxAs layer 5, and an N type GaAs layer 6 are successively epitaxially grown on an N type GaAs substrate 1. For example, an Si dioxide film is provided on the layer 6 of the substrate, and two stripe windows are formed on the same straight line at an interval of approx. 5-20mum therebetween. Next, P type regions 7a and 7b are formed. Two isolated P-side electrodes 8a and 8b are formed on the surface of the layer 6 including these P type stripe regions 7a and 7b by the use of e.g. Au-Zn. An N- side electrode 9 is formed on the surface of the substrate by the use of e.g. Au-Ge. Finally, reflection mirror surfaces 10a and 10b of the resonator are formed by cleavage. |
