| 摘要 |
PURPOSE:To eliminate the breakage of electrodes due to a level difference by burying a polycrystalline Si conductive layer in apertures when the surface of a semiconductor substrate in which semiconductor elements are arranged is coated with an insulating film and apertures are opned with corresponding to the electrodes to form a metallic wiring layer to be connected to the electrodes through the apertures on said insulating film. CONSTITUTION:An N<+> type region is formed by diffusion in a surface layer of a P type Si substrate 11 and the whole surface including said region is covered with a PSG film 12 by CVD method. Next, an aperture 16 is opened on the film 12 with corresponding to the N<+> type region and a metallic wiring pattern 23 consisting of a metallic wiring 22 being incontact with the N<+> type region through said aperture 16 is formed. At this time, a polycrystalline Si layer 21 given conductivity by doping with As is buried in the aperture 16 with leveling the surface with that of the film 12. After that, the whole surface is protected by a protective film 24. Thus, a failure of breakage due to level difference does not occur in a electrode leading out part of the element thereby stabilizing the semiconductor device. |
