| 摘要 |
The specification discloses a low-temperature process for depositing a layer of a sulfide of a chosen element, such as zinc sulfide, on the surface of a substrate while simultaneously avoiding damage to the substrate. The process comprises exposing the substrate to a selected vapor phase reactant containing the chosen metal, such as dimethyl zinc, in the presence of neutral, charge-free sulfur atoms formed in a manner which avoids the generation of charged particles and high energy radiation that would damage the substrate. The sulfur atoms react with the vapor phase reactant to form the sulfide thereof, such as zinc sulfide, which deposits as a layer on the surface of the substrate. In a preferred process embodiment, the neutral sulfur atoms are generated by photochemical dissociation. In addition, there is disclosed a process for forming a native sulfide layer on the surface of a chosen substrate by exposing the substrate to neutral, charge-free sulfur atoms.
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