| 摘要 |
PURPOSE:To reduce noises generated by beams projected to isolation regions by forming thin-films having excellent optical absorbency on the isolation regions mutually isolating a plurality of light-receiving regions. CONSTITUTION:An amorphous silicon layer 20 having excellent optical absorbency is formed extending over the whole surface of an isolation region 1 on a passivation film 13 on the isolation region 1 in a photosensor, which has an n type silicon substrate 6, an n<-> layer 7, a p<+> layer 8, an n<+> layer 9, an SiO2 film 10, passivation films 13 and electrodes 14-17 and the passivation film 13 therein consists of a plycrystalline silicon film 19, to which oxygen is doped, and a plasma Si3N4 film 11. Consequently, beams projected to the isolation region 1 are absorbed approximately, and beams hardly reach to the n<-> layer 7. Accordingly, noises can be reduced extremely because carriers are hardly generated in an n<-> layer 7b in the isolation region 1. |
