| 摘要 |
PURPOSE:To improve the damping proof property of a semiconductor device by a method wherein the surface of a semiconductor element is covered previously with a composition consisting of the specified organosilane compound or the partially hydrolyzed product thereof and the hardening promotor thereof. CONSTITUTION:A semiconductor element 1 is made to come in contact with a tab 3 through an electrically conductive adhesive 2, and conducted to an inner lead part 5 and an outer lead part 6 by a bonding wire 4. A film 8 consisting of a composition containing an organosilane compound indicated by the general formula [R<1> is a monovalent organic radical having at least one piece of a reactive radical enabled to perform chemical bonding with a molding resin material for sealing, R<2> is a monovalent organic radical, X is a hydrolyzable radical or hydroxyl radical excluding a halogen atom, (a) is the integer of 1-3, (b) is the integer of 0-2 to be decided by a+b=1-3] is formed on the surfaces of the semiconductor element 1 and the inner lead 5 thereof, and because the periphery thereof is sealed by resin 9, damping proofness is improved sharply. |
