| 摘要 |
PURPOSE:To enable stably control the quantity diffusion on a diffusion region by a method wherein impurities are brought to the boundary of a semiconductor film and a semiconductor substrate by performing an ion implantation using electrically inactive impurities, and then electrically active impurity diffusion is generated by performing a heat treatment. CONSTITUTION:The contact part of a base 16 is selectively left on a P type Si substrate 11, and polysilicon 17-19 are selectively left on an emitter forming part and a collector contact part. Besides, after a resist film 20 has been covered on the above-mentioned parts, excluding the emitter and collector regions, by performing a photolithographic method, As ions are introduced into the emitter region and the polysilicon 18 and 19 of the collector contact part. Subsequently, Si ions 21 are implanted and damage is given to the interface of the polysilicon 18, a silicon interface 22 and the polysilicon 19. Then, an emitter region 24 and a collector contact region 25 are formed by performing a diffusion on the emitter using a heat treatment. The value of current amplification factor is brought in a stabilized state when Si ions 21 exceed 10<13>cm<-2> or thereabout, and the interface of polysilicon and silicon is brought in a stabilized state. |
