| 摘要 |
PURPOSE:To readily form a GaAsthetaMESFET having low noise and high mutual conductance in a high yield by implanting impurity ions with a resist and the first insulating film as masks, then depositing the second insulating film, closing a gate with the film as a mask, and deposition a gate metal. CONSTITUTION:An active layer 12 is formed on a semi-insulating substrate 11, the first insulating film 13 and the second insulating film 14 are then formed thereon, and a photoresist is coated, thereby forming a photoresist layer 15 of width L1. Then, with the layer 15 as a mask the film 14 is etched. The film 14 is sidewisely etched laterally in the length L2 by this etching. Then, with the photoresist 15 and the insulating film 14' as masks impurity is implanted to form N<+> type regions 16, 17, and the third insulating film 18 is deposited. Thereafter, the film 14' is etched, with the film 18 as a mask the film 13 is etched. Then, photoresist 19 is coated, a window for forming a gate is formed, and metal 20' is deposited. |
