| 摘要 |
PURPOSE:To obtain the titled device light and hard to break and having good efficiency by a method wherein one electrode is formed while being buried in lattice form in the surface layer of a semiconductor substrate having a smaller specific gravity than a III-V group compound, a III-V group compound layer having a P-N junction being deposited thereon, and the other electrode being then provided thereon likewise in lattice form. CONSTITUTION:Grooves of a lattice form are cut in the surface layer part of an Si single crystal substrate 21 by the lithography technique, where an Mo film 22 serving as one electrode is buried into a flat surface. Next, an N type GaAs layer 23, a P type GaAs layer 24 and a thin P type GaAlAs layer 25 are grown thereon by lamination, thus generating the P-N junction. Thereafter, the other electrode 26 likewise of a lattice form corresponding to the electrode film 22 is buried in the surface of the layer 25, while being made to abut against the layer 24. Accordingly, the solar battery having the conversion efficiency of 19% or more and good crystallinity is obtained. |
