| 摘要 |
PURPOSE:To obtain the titled substrate of low cost excellent in surface smoothing property, lighography resistance, insulating property, ohmic property and stability with times by a method wherein a metallic substrate is coated with a polyimide series resin, and amorphous Si layer is provided thereon. CONSTITUTION:A polyimide series resin layer having an imide group for the main chain is adhered on the metallic substrate such as an aluminum plate, a copper plate, iron plate, a stainless plate, or the like. This resin layer is obtained by the polycondensation of a aromatic tetra group acid anhydride with aromatic, aliphatic or alicyclic diisocyanate. Besides, aromatic dicaroboxylic acid can be kept incorporated therein as the component of copolymerization. Thereafter, an Al layer of about 1mum thickness and an amorphous Si layer of about 150Angstrom thickness are laminated and adhered on this resin layer into the substrate for a semiconductor device. |
