发明名称 |
SEMICONDUCTOR DEVICE WITH FUSE |
摘要 |
A semiconductor device with a fuse including an insulating layer having at least one step. A fusible film on the insulating layer crosses the step and a covering film is formed on the fusible film, the step and the insulating layer. When the portion of the fusible film crossing the step is irradiated with a laser beam the portion of the fusible film on the upper surface of the insulating layer melts and flows onto the lower surface of the insulating layer without forming a hole, thereby separating the fusible film at the step. |
申请公布号 |
EP0083211(A3) |
申请公布日期 |
1985.04.17 |
申请号 |
EP19820306892 |
申请日期 |
1982.12.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
KAMIOKA, HAJIME;TAKAGI, MIKIO;SATO, NORIAKI;NAKANO, MOTOO;IWAI, TAKASHI |
分类号 |
G11C17/06;G11C17/14;H01L21/82;H01L23/525;H01L27/10;(IPC1-7):H01L23/52 |
主分类号 |
G11C17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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