发明名称 SEMICONDUCTOR DEVICE WITH FUSE
摘要 A semiconductor device with a fuse including an insulating layer having at least one step. A fusible film on the insulating layer crosses the step and a covering film is formed on the fusible film, the step and the insulating layer. When the portion of the fusible film crossing the step is irradiated with a laser beam the portion of the fusible film on the upper surface of the insulating layer melts and flows onto the lower surface of the insulating layer without forming a hole, thereby separating the fusible film at the step.
申请公布号 EP0083211(A3) 申请公布日期 1985.04.17
申请号 EP19820306892 申请日期 1982.12.23
申请人 FUJITSU LIMITED 发明人 KAMIOKA, HAJIME;TAKAGI, MIKIO;SATO, NORIAKI;NAKANO, MOTOO;IWAI, TAKASHI
分类号 G11C17/06;G11C17/14;H01L21/82;H01L23/525;H01L27/10;(IPC1-7):H01L23/52 主分类号 G11C17/06
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