发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To contrive to reduce the bad influences of return noises, without losing the characteristic of small astigmatism, by a method wherein the thickness of a clad layer is varied along the direction of a groove stripe. CONSTITUTION:A clad layer 12 of n-conductivity type and, an active layer 13 and a clad layer 14 of p-conductivity type are successively grown on a semiconductor substrate 11 of n-conductivity type, resulting in the formation of a double hetero junction. Besides, a current block layer 15 of n-conductivity type grown and formed on the clad layer 14 provided with a stripe groove 16 reaching the layer 14, and a coat layer 17 of p-conductivity type grown and formed on the layer 15 by including the groove 16 are furnished. The layer 14 is formed so as to have at least two kinds of thicknesses to the direction of the stripe.
申请公布号 JPS6066890(A) 申请公布日期 1985.04.17
申请号 JP19830175368 申请日期 1983.09.22
申请人 TOSHIBA KK 发明人 SHIMADA NAOHIRO;MOGI NAOTO
分类号 H01S5/00;H01S5/10;H01S5/223 主分类号 H01S5/00
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