发明名称 FORMING METHOD OF SEMICONDUCTOR PATTERN
摘要 PURPOSE:To prevent disconnection at a stepped section even when a film is formed on a pattern shaped to a substrate by simultaneously projecting ions having different mass or simultaneously projecting ions having different beam diameters from different ion sources while focussing one ion beams on the surface of a sample. CONSTITUTION:Two kinds of ions having different mass are generated by an ion source 4, and lead out as ion beams having energy of several keV-several dozen keV by a leading-out electrode 5. Ion beams are adjusted so that ions 7 having small mass are focussed on the surface of a sample 9 by a coil type lens 6. Ions 8 having large mass are defocussed on the surface of the sample 9 at that time. Accordingly, the shape of a pattern shown in the figure is obtained through simultaneous sputtering by such ions of two kinds, and the coating rate of a film formed on the pattern 2 is improved because the pattern 2 takes a tapered shape.
申请公布号 JPS6066433(A) 申请公布日期 1985.04.16
申请号 JP19830174107 申请日期 1983.09.22
申请人 OKI DENKI KOGYO KK 发明人 ICHIKAWA FUMIO
分类号 H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):H01L21/302 主分类号 H01L21/302
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