| 摘要 |
<p>PURPOSE:To change capacitance per one chip easily by arranging and forming a plurality of the same fundamental element groups on the same substrate and isolating the substrate so that a plurality of the fundamental element groups are made to be contained in one element piece. CONSTITUTION:A plurality of the same fundamental element groups (electronic circuits) 2 are arranged and formed on a semiconductor wafer 1, and scribing lines 3 are formed to a latticed shape. The wafer is divided into one element piece (a chip) each by utilizing the scribing lines 3 so as to contain tow fundamental element groups 2, 2, and both fundamental element groups 2, 2 are coupled electrically by a metallic mask in a wiring process. When one fundamental element group 2 is constituted by four of 2 input NANDs, the chip of eight of 2 input NANDs can be shaped instantaneously. The chip having capacitance of integer times as much as the fundamental element group 2 can be obtained easily according to the method of the division of the wafer 1.</p> |
