发明名称 HIGH-PURITY MOLYBDENUM TARGET AND HIGH-PURITY MOLYBDENUM SILICIDE TARGET FOR LSI ELECTRODE AND MANUFACTURE THEREOF
摘要 PURPOSE:To obtain a target capable of displaying extremely excellent film characteristics when forming a molybdenum film or an LSI electrode by each bringing alkali metal content and radioactive element content to specific values. CONSTITUTION:High-purity metal molybdenum, alkali metal content thereof is 100ppb or less and radioactive element content thereof is 10ppb or less, or a mixture of said molybdenum and high-purity silicon is used. A metal molybdenum or a molybdenum compound is dissolved to from an aqueous solution containing molybdenum, the aqueous solution is purified, and a crystal containing molybdenum is crystallized. The crystal is separated into a solid and a solution, washed and dried, and heated and reduced, thus preparing high-purity molybdenum powder. The powder is pressure-molded, sintered and dissolved to prepare high-purity molybdenum ingot, and the ingot is plastically processed and machined, thus manufacturing said high- purity target.
申请公布号 JPS6066425(A) 申请公布日期 1985.04.16
申请号 JP19830174164 申请日期 1983.09.22
申请人 NIPPON DENSHIN DENWA KOSHA;NIPPON KOGYO KK 发明人 OIKAWA HIDEO;AMASAWA TAKAO;HONMA NAKAHACHIROU;MIYAZAKI HIDEO;KIYOUNO IWAO;MORI NOBUYUKI;KATOU YOSHIHARU;KUROKI MASAMI
分类号 H01L29/78;C22B34/34;H01L21/28;H01L21/285;H01L29/49 主分类号 H01L29/78
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