| 摘要 |
PURPOSE:To obtain a method through which the clean surface of a substrate is exposed without flowing a corrosive gas such as HCl by blowing off high- purity hydrogen gas to the surface of the substrate from a blowoff port under the state in which a temperature is elevated before epitaxial growth on the substrate. CONSTITUTION:A plurality of substrates are placed on a supporter 3, and heated by an RF coil 9. Arsine gas diluted by hydrogen from a supply source is flowed in from a gas introducing duct 7 in order to prevent evaporation due to pyrolysis of As from the GaAs substrates at that time. The substrates are heated at 700 deg.C, and high-purity hydrogen gas is blown against the surfaces of the substrates from a blowoff port 8. Hydrogen as a carrier gas flows on the surfaces of the substrates, but impurities made to be contained in arsine gas for inhibiting the pyrolysis of As and contamination adhering on an inner wall on the substrate upstream side of a reaction furnace are carried, and there is very possibility of which the surfaces of the substrates are contaminated. The substrate can be purified by blowing pure high-purity hydrogen gas against the surface of the substrate from a thin blowoff port apart from the carrier gas. |
