| 摘要 |
PURPOSE:To check damage during the process of production, and to enhance manufacturing yield and reliability of a semiconductor device by a method wherein aslant processed surfaces are formed to the peripheral edge parts of a substrate, and inorganic material insulating films are formed on the surfaces. CONSTITUTION:A P type emitter layer 32 and a P type base layer 33 are formed respectively on both the surfaces of an N type semiconductor substrate 30, and an N type emitter region 34 is formed. The sides of the substrate 30 are scraped by a grinder to form respectively negative bevel faces B1, B2 making an angle of 3 deg. or less (the bevel angle theta) with P-N junction faces PN1, PN2. Thermal oxidation is performed to form oxide films as surface covering films 41, and metal films such as aluminum, etc. are evaporated to be patterned to form an anode electrode 35, a cathode electrode 36 and a gate electrode 37. Because there exists no part cut out making an acute angle with the substrate 30 by the bevel process, mechanical strength is improved. |
