| 摘要 |
PURPOSE:To obtain a resin film having excellent heat-resisting properties and superior characteristics in sufficient film thickness by applying a mixed liquid of a specific polyimide resin precursor solution and a silicon compound solution, to which phosphorus is made to be contained previously, onto a silicon substrate and heating the substrate. CONSTITUTION:A mixed liquid of a polyimide resin precursor solution consisting of a solution containing reactants of pyromellitic dianhydride, 3,3', 4,4'-benzophenyl tetracarboxylic acid dianhydride, 4,4'-diaminodiphenyl ether and 4,4'- diaminodiphenyl ether-3-carboxylic amide and a silicon compound solution to which phosphorus is made to be contained previously is applied onto a silicon substrate, and heated. Consequently, a resin film in which both components of Si- 0-Si components and a polyimide component are made to be contained in a film is formed, and heat-resisting properties are improved and high cracking resistance is obtained. A silicon-polyimide film containing phosphorus can be formed by shaping the film while a phosphorus element is made to be contained, and phosphorus functions as the fixation of movable ions and can lower leakage currents. |
