| 摘要 |
PURPOSE:To contrive to enhance crystallinity, and to enhance the characteristic of a thin film transistor by a method wherein a semiconductor thin film is annealed by infrared rays. CONSTITUTION:The island 12 of an amorphous silicon film or a polycrystalline silicon film is formed on a glass substrate 11, and annealed in an inactive gas atmosphere according to an infrared lamp to grow a crystal. Infrared rays are not absorbed by the transparent substrate such as glass, etc., and the temperature rise of the transparent substrate is not generated. A silicon oxide film 13 to be used as a gate film, and a crystal silicon film 14 to be used as a gate electrode are formed, surce and drain diffusion layers 15 are formed by ion implantation, interlayer insulating films 16 are formed, and source and drain electrodes are formed by a transparent and electrically conductive film. Because crystallinity of the semiconductor thin film is enhanced, the ON-OFF ratio of the transistor becomes to a number of six figures or more. |
