MANUFACTURE OF SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PURPOSE:To make the fundamental lateral mode oscillation feasible at low threshold value by a method wherein a groove with (111) A face as oblique side is formed from (100) face of an InP substrate while a current strangulating layer and light absorbing layer are grown on the part excluding the groove while controlling respectively thickness making use of the dependence of the crystal growing speed upon facial direction. CONSTITUTION:A groove 14 with (111) A face as oblique side 14a and an almost flat bottom 14b is formed on an N type InP substrate 11 with facial direction (100) of a surface 11a providing the groove 14 with width making it impossible to form a P type InP layer 15. Next the P type InP layer 15 to be a current strangulating layer is grown on the exposed surface while an N type InGaAsP layer 16 to be a light absorbing layer half-burying the groove 14 and an N type InP the first clad layer 17 completely burying the groove 14 to flatten the surface are grown on the groove 14. Moreover an InP GaAsP active layer 18 and a P type InP the second layer 19 are laminated on the layer 17. Through these procedures, the thick layers 16 and 17 may be formed in the groove 14 by one time liquid epitaxial growing process to avoid the bending of the layer 18 to be formed on the layer 17.