| 摘要 |
PURPOSE:To produce the title laser oscillating in single lateral mode even at high input by a method wherein an N type AlGaAs layer with forbidden band width larger than that of active layer, a P type GaAs layer with small forbidden band width are laminated to be grown on an N type GaAs substrate and a V- shaped groove getting into the N type AlGaAs layer is made on the central part of the P type GaAs layer while an N type and a P type AlGaAs clad layers holding an active layer are provided on the V-shaped groove. CONSTITUTION:An N type Al0.3Ga0.7As layer 16 with forbidden band width larger than that of a non-doped GaAs active layer 11 later provided and a P type GaAs layer 17 with small forbidden band width are laminated to be epitaxially grown on an N type GaAs substrate 10. Next a V-shaped groove 20 getting into the layer 16 is made on the central part of the layer 17 and the overall surface including the sides is coated with an N type Al0.3Ga0.7As clad layer 12 and a non-doped GaAs active layer 11. Later a P type Al0.3Ga0.7As clad layer 13 is deposited while burying the groove 20 and the overall surface is covered with a GaAs cap layer 15. |
