| 摘要 |
PURPOSE:To improve the transfer characteristics and to attain high density and large capacity for a magnetic bubble memory element, by forming the 1st magnetic bubble transfer means on a garnet thin film and then the 2nd magnetic bubble transfer means on the 1st transfer means. CONSTITUTION:A soft magnetic substance pattern of the 1st magnetic bubble transfer means 12 is formed after a conductor pattern 3a is formed. In other words, a soft magnetic film 6 is put on the entire surface of the pattern 3a. The 1st photoresist pattern 7a is formed at the position of the means 12 and removed by etching to obtain a soft ferromagnetic substance pattern 6a as the means 12. A polymer resin film 5 of PIQ, etc. is formed on the entire surface of the means 12, then a soft ferromagnetic pattern of the 2nd magnetic bubble transfer means 19 is formed on the film 5. The 2nd photoresist pattern 7b is formed at the position of the means 19 and removed by etching to obtain a soft ferromagnetic substance pattern 6b as the means 19. Then the pattern 7b is removed by etching. |
