| 摘要 |
PURPOSE:To obtain a photomask which is manufacturable with an easy process, permits formation of finer mask patterns and is suitable as a light shielding material for a UV light source. CONSTITUTION:Diazo type photoresist 2 is coated by spin coating, etc. on a glass base plate or quartz base plate 1. The photoresist 2 is then patterned by photoexposing or electron exposing. The resist is then heat treated at >=270 deg.C, by which the intended photomask suitable as a light shielding material for a light source of 300-450nm wavelength is obtd. The photomask is formed more easily by the above-mentioned method than by the conventional method which forms the photomask by forming a chromium film by vapor deposition, sputtering, etc. and dry etching the film. |
