MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To form a contact hole with no overhang by etching a first thin film in a contact region and coating the peripheral section of the contact region with a second resist mask. CONSTITUTION:An Si nitride film 9 is etched while using a photo-resist 10 in a contact section as a mask. The resist 10 is removed. A second photo-resist 11 is patterned, and SiO2 8 is etched. An overhang is not generated on the lower side of the Si nitride 9 because the resist 11 is formed on the side inner than the end of the etched Si nitride 9. The resist 11 is removed, and tantalum oxide 12 is evaporated from the upper section of a contact hole.