| 摘要 |
PURPOSE:To enable to suppress the increase in the area of a chip and to reduce the bonding temperature and to improve the high frequency characteristic and the reliability of a high frequency output transistor by forming a heat sink formed of a plurality of active region cells on the upper surfasce and a good thermal conductive metal layer on the back surface of a substrate, and falling the thickness of the substrate and the distance between the cells relatively in the specific range. CONSTITUTION:The thickness of a semiconductor chip 11 is set to a value T= 10-50mum which can readily handle and be effective for heat sink. A heat sink 13 made of good thermal conductive metal such as gold or silver is covered by depositing or plating on the back surface in the thickness of approx. 10-50mum to obtain mechanical strength. Further, when the distance between transistor cells 12 is selected to a range of D=0.512T-2.56T to dispose the cells, the increase in the area of the chip can be suppressed, and high output can be further obtained without deteriorating the high frequency characteristic such as power gain in the high frequency high output transistor. |
