发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the stepwise disconnection of electrode wirings by burying the wirings in a groove of a solid pattern formed on an insulating film to prevent the formation of an overhung on an interlayer insulating film, thereby removing a local stress corrosion of the wirings. CONSTITUTION:The prescribed gate electrode wirings 3 and an interlayer insulating film 4 are formed, an inverting pattern of the prescribed aluminum electrode wirings is formed of a photoresist 7, and a groove of a depth corresponding to the thickness of the aluminum electrode wirings is formed on the film 4 by a gas plasma. After the photoresist 7 is removed and an electrode wiring aluminum film 5 is covered and formed, a photoresist film 8 is rotatably coated, and the uppermost surface is flattened over the film 5. The aluminum is entirely etched under the same conditions of the etching and removing velocities of the films 8, 5, and aluminum electrode wirings 5 are formed on the prescribed position. Then, the stepwise difference due to the aluminum electrode wirings can be eliminated, and the main surface of the interlayer insulating film 6 formed thereafter is smoothened.
申请公布号 JPS6059754(A) 申请公布日期 1985.04.06
申请号 JP19830168901 申请日期 1983.09.13
申请人 MATSUSHITA DENSHI KOGYO KK 发明人 OOKUMA TOORU
分类号 H01L21/3205;(IPC1-7):H01L21/88 主分类号 H01L21/3205
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