| 摘要 |
PURPOSE:To ensure coexistence of an active element for small signal and a high tension resisting active element by providing a groove on one end of a semiconductor substrate for the high tension resisting active element, providing three regions for the active element for small signal on the adjacent substrate, growing an epitaxial layer on all the surface including these above by way of an insulation layer and dividing each separated region. CONSTITUTION:On one end of a p type Si substrate 10, an aperture 12 wherein the bottom is tapered is provided by anisotropic etching, the region a1 is used for a high tension resisting active element consisting of bipolar transistors and the adjacent regions a2-a4 are each used for an active element consisting of bipolar transistors for small signal. Then, an SiO2 insulation layer 22 is provided by O2 ion 20 implantation on all the surface and an arsenic layer 30 on the region a1 and a phosphorus layer 40 on the regions a2-a4 are provided. Later, an Si layer is grown epitaxially on all the surface, the regions a1-a4 separate in an island state with a p<+> type separation region 60, impurity in the layers 30 and 40 is heat-treated to be diffused upwards and each region a1-a4 is changed to n<-> type, n type, etc. |
