| 摘要 |
PURPOSE:To obtain a positive connection by boring a contact hole to an insulating layer section positioned on a first layer wiring, a second wiring layer and a third layer wiring and burying a conductive substance into the contact hole to take a contact when the first layer wiring is applied on a semiconductor substrate, the first layer wiring is coated with the inter-layer insulating film, the second wiring layer is buried into the insulating film, the third layer wiring is applied on the surface of the insulating film and both the first wiring layer and the third wiring layer and both the second wiring layer and the third wiring layer are each connected. CONSTITUTION:A first layer wiring layer 2 is formed on a semiconductor substrate 1, the whole surface of the wiring layer 2 is coated with an inter-layer insulating film 3 into which a second wiring layer 4 is buried, and a third wiring layer 5 is applied on the insulating film 3. When the wiring layer 2, 5 and 4, 5 are connected, contact holes 6 and 7 are each bored to the insulating films 3 in sections positioned on the wiring layers 2 and 4 before applying the wiring layer 5, and the contact holes are filled previously with a conductive substance 8. Accordingly, when the wiring layer 5 is formed, the wirings 2, 5 and 4, 5 are each brought into contact through the conductive substances 8, and a positive connection in which there is no disconnection, etc. is obtained. |
