| 摘要 |
A method of forming a layered structure, which method comprises depositing a first metal layer on a substrate, depositing a barrier layer on the first metal layer, depositing a second metal layer on the barrier layer, forming a first masking pattern on the second metal layer, etching the first and second metal layers and the barrier layer in accordance with the first masking pattern, removing the first masking pattern, forming a second masking pattern on the second metal layer, etching the second metal layer in accordance with the second masking pattern, removing the second masking pattern, depositing a dielectric layer having a thickness sufficient to cover the second metal layer, etching the dielectric layer to expose the second metal layer, and depositing on the etched dielectric layer and exposed second metal layer a further metal layer to contact the exposed second metal layer. |
