发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To prevent the generation of cracks in a quartz target, to lengthen life and to form a thin-film having excellent quality by forming a metallic layer integrally shaped to the back of the target by a material, wetting properties thereof with a fixing material are excellent and alloying porperties thereof at the high melting point are low. CONSTITUTION:A Cr layer 17 is integrally formed previously to the back of a quartz board 14, nd the quartz board 14 is fixed to a packing plate 15 by wetting properties between the Cr layer 17 and a fixing material 16 (an alloy layer of In/Sn). Consequently, thermal stress is not concentrated because heat generated by a collision and a reaction with the quartz board 14 of Ar ions is dissipated rapidly to the packing plate 15 through the Cr layer 17 and the In/Sn alloy layer 16 and there is no air gap at that time. Accordingly, the generation of cracks in the quartz board 14 can be prevented, and the generation of foreign matters and a contamination to a formed film can be obviated.
申请公布号 JPS6057941(A) 申请公布日期 1985.04.03
申请号 JP19830164986 申请日期 1983.09.09
申请人 HITACHI SEISAKUSHO KK 发明人 OZAKI MAMORU;SASABE SHIYUNJI
分类号 C23C14/34;H01L21/31 主分类号 C23C14/34
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