| 摘要 |
PURPOSE:To enable to thin film thickness of the first layer polycyrstalline silicon film, and to facilitate etching of the two layer film of a semiconductor device by a method wherein the polycrystalline silicon film is formed on a gate oxide film, a natural oxide film, etc. generated thereon are removed, and a metal film or a metal silicide film is formed thereon in the condition not reformed with the films thereof. CONSTITUTION:After field oxide films 2 and a gate oxide film 3 are formed on a silicon substrate 1, a doped polycrystalline silicon film 4' of 1,000Angstrom film thickness if formed, for example. A natural oxide film 7 generated at this time is removed, and at the same time, an MoSi2 film 5 of 2,000Angstrom thickness, for example, is deposited according to the sputtering method in succession without exporsing in an oxidizing atmosphere as not to be reformed with the natual oxide film. A gate pattern is formed by a photo resist, and the two layer film is etched using the gate pattern therof as a mask. After the resist is removed, heat treatment is performed to reduce resistance of the MoSi2 film 5. The polycrystalline silicon film 4' is converted into an N<+> type doped silicon film 4 accroding to activation of phosphorus by this process. Accordingly, the gate electrodes 4, 5 are formed. After then, a source and the drain 6 are formed according to ion implantation. |
