发明名称 |
Metallization process for integrated circuits |
摘要 |
Metal contacts and interconnections for semiconductor integrated circuits are formed by a process of two metal depositions to increase step or sidewall coverage. After a first layer of metal is deposited, a preferential etch removes all of the metal except on the vertical sides of steps or apertures. A second layer of metal is deposited over the remaining parts of the first, resulting in smoother transistions and greater thickness at steps.
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申请公布号 |
US4507853(A) |
申请公布日期 |
1985.04.02 |
申请号 |
US19820410755 |
申请日期 |
1982.08.23 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MCDAVID, JAMES M. |
分类号 |
H01L21/3213;H01L21/768;(IPC1-7):H01L21/285 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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