发明名称 Metallization process for integrated circuits
摘要 Metal contacts and interconnections for semiconductor integrated circuits are formed by a process of two metal depositions to increase step or sidewall coverage. After a first layer of metal is deposited, a preferential etch removes all of the metal except on the vertical sides of steps or apertures. A second layer of metal is deposited over the remaining parts of the first, resulting in smoother transistions and greater thickness at steps.
申请公布号 US4507853(A) 申请公布日期 1985.04.02
申请号 US19820410755 申请日期 1982.08.23
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MCDAVID, JAMES M.
分类号 H01L21/3213;H01L21/768;(IPC1-7):H01L21/285 主分类号 H01L21/3213
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