| 摘要 |
PURPOSE:To enable formation of a finite pattern without complicating processes by directly irradiating energy beams obliquely to an uneven wafer surface applied with a resist film and by partially exposing the resist film to light. CONSTITUTION:An Al-Si film 12 is deposited on an SiO2 film 11 having great uneveness formed on a wafer. A first colored resist film 13 is applied over the film 12 and dried. Visible light beams 14 as energy beams are made to irradiated to the colored resist film 13, which is then developed to form a first resist pattern 13' in the recess of the SiO2 film 11 with the Al-Si film 12 interposed between them. A second colored resist film 15 is formed over there, and then exposed to light and developed as usual so as to form a second resist pattern 15'. The Al-Si film 12 is patterned, using this second resist pattern 15' as a mask, to form an Al-Si film pattern 12'. Thus, the great unevenness of the wafer surface can be flattened by the first resist pattern 13' acting as a layer of flattening material. In such a manner, processes can be simplified, while a finite Al-Si film pattern 12' can be formed. |
