| 摘要 |
<p>A sputtering apparatus is arranged such that the material to be treated and the target are housed in a vacuum vessel and high-frequency electric power is supplied to the material and the target, thereby forming a film of a desired depth on the surface of the material. For the high-frequency electric power, the output of a single oscillator is applied to two amplifiers, whereby two kinds of high-frequency electric power are the respective outputs of the amplifiers and are respectively applied to the material to be treated an to the target in the vacuum vessel through respective wattmeters and matching circuits. By virtue of this arrangement, it is possible to accurately determine the electric power applied to the material and to the target. Moreover, since the two kinds of electric power have the same frequency, each of the two kinds of electric power can be simply and precisely adjusted by adjusting the impedance of the corresponding matching circuit. Accordingly, it is possible to accurately form a film of a desired depth on the surface of the material.</p> |
