| 摘要 |
PURPOSE:To form an electrode consisting of the two layers of a high melting point metal thin film and a well conductive metal layer, and to form the electrode of small sheet resistance with favorable process precision by a method wherein the high melting point metal thin film is etched using the pattern of the well conductive metal layer as a mask. CONSTITUTION:A high melting point metal thin film 2 is formed on a semiconductor substrate 1 according to the method of sputtering, evaporation, etc. Then, a resist pattern 3 is formed on the high melting point metal thin film 2 using photoengraving technique, etc. Then a well conductive metal 4 is evaporated on the whole surface. Then, the resist pattern 3 is removed together with the well conductive metal layer 4 on the resist pattern 3 (lifted off). Accordingly, the electrode pattern consisting of the well conductive metal layer 4 is formed on the high melting point metal thin film 2. The high melting point metal thin film 2 is etched to be removed finally according to the RIE method, etc. using the well conductive metal layer 4 as a mask. |
