发明名称
摘要 A solar cell fabrication procedure is described which is characterized by (1) formation of a "polysilazane" coating on a silicon substrate, (2) photo-lithography of the polysilazane coating to form a plating mask pattern, (3) a heating step which removes residual photoresist and converts the polysilazane coating to a denser form of silicon nitride having a reduced etch rate, and (4) use of densified silicon nitride as a mask for the plating of electrode metal and also as an anti-reflection coating.
申请公布号 JPS60500392(A) 申请公布日期 1985.03.22
申请号 JP19840500705 申请日期 1984.01.06
申请人 发明人
分类号 H01L21/28;H01L21/288;H01L21/318;H01L31/0216;H01L31/04;H01L31/18 主分类号 H01L21/28
代理机构 代理人
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