| 摘要 |
A semiconductor device in which at least a part of the active surface is covered by a passivating combined layer. According to the invention the passivating combined layer comprises two layers of the same semiconductor material lying one on top of the other, the lowermost layer having a resistivity of at least 1010 ohm.cm, and the layer present thereon having a resistivity of at most 108 ohm.cm. |
