发明名称 PROCESS FOR FORMING RESIST PATTERN
摘要 Negative resist patterns of a high definition are produced by coating on the substrate a negative-working resist material comprising a phenol-formaldehyde novolak resin and a compound containing at least one azido radical, exposing the coated resist material to a desired pattern of electron beams, and developing the exposed resist material.
申请公布号 DE3070128(D1) 申请公布日期 1985.03.21
申请号 DE19803070128 申请日期 1980.11.20
申请人 FUJITSU LIMITED 发明人 TODA, KAZUO
分类号 G03F7/008;C08F2/00;C08F2/54;G03F7/012;G03F7/038;H01L21/027;H01L21/30;(IPC1-7):G03F7/26;G03F7/08 主分类号 G03F7/008
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