Multilayer semiconductor devices with embedded conductor structure.

摘要

A semiconductor substrate (1) has an insultion layer (2, 9) on its surface with a semiconductor layer (6) on the insulation layer (2, 9). The semiconductor layer (6) contacts the substrate (1) through a hole (3) in the insulation layer (2, 9). A conductive region containing a conductive layer 10 of semiconductor material is provided in the insulation layer (2, 9). The conductive layer is separated by insulation (11) from the semiconductor layer (6) and by insulation (9) from the substrate (1). The surface of the insulation (11) is substantially level with the surface of the insulation layer (2) as this prevents the formation of defects in the semiconductor layer (6) adjacent the conductive region, which defects would otherwise reduce the carrier mobility and increase the leakage current. The device may include additional semiconductor and insulator layers, with additional conductive regions, so that a stacked structure may be formed.