| 摘要 |
PURPOSE:To prevent an erroneous operation due to electromagnetic induction and electrostatic induction in a semiconductor device by a method wherein a patterning is performed on an on-chip shielding film to be formed on the surface of the device in such a way that the on-chip shielding film is formed into a planar configuration complimentary to the wiring patterns. CONSTITUTION:A patterning is performed on a transparent conductive film 8 which performs an on-chip shielding in such a way that the film 8 is formed into a planar configuration complimentary to wiring layers 5. That is, penetrated holes are formed in the transparent conductive film 8 at positions on the film 8, which correspond to the wiring layers 5..., and furthermore, the end edges of the wiring layers 5 are matched to the end edges of the transparent conductive film 8. Accordingly, the overlap of the transparent conductive film 8 and the wiring layers 5 is substantially zero. When the area to be occupied by the wiring layers 5... is remarkedly large, the upper parts of parts only of the wiring layers 5..., where are specially sensitive to electrostatic induction and electromagnetic induction, are also protected in such a way as to be covered with the transparent conductive film 8. In addition, the film thickness of a silicon oxide film 4 is set in 1.5mum, the film thickness of an insulating film 6 in 1mum and the film thickness of the transparent conductive film 8 in 1mum. By this way, an erroneous operation due to electromagnetic induction and electrostatic induction is prevented, and moreover, the reliability of this semiconductor device to the environment can be also improved. |
