| 摘要 |
PURPOSE:To accelerate the crystallization and crosslinking reaction in the required part of a thin film by irradiating light to the thin film formed on a substrate by a plasma vapor deposition method. CONSTITUTION:The inside of a bell-bar 2 is evacuated and electricity is conducted from a power source 7 to a boat 4 to heat the boat 4 so that the material for vapor deposition in said boat is evaporated. The evaporated material particles enters the plasma region formed by a high-frequency coil 10 where the particles are ionized and the ions are accelerated by the voltage impressed from a power source 8 for acceleration to a substrate holder 6 to collide against a substrate 14, thereby forming a thin film. If the thin film is inorg. quality, said film is amorphous without crystallizing and if the thin film is org. quality, the film having a low degree of polymn. is formed. The surface of the thin film is scanned along the required pattern by an optical system 17 having an optical polarizer 18 from a light source 16 such as laser light or Xe lamp. Energy is added to the scanned part, by which the amorphous part is crystallized with the inorg. thin film and the pattern in which crosslinking reaction is accelerated is easily formed with the thin org. film. |
