| 摘要 |
PURPOSE:To enable reduction in size and weight and to obtain an element particularly suitable for tomography, etc. by sandwiching a scientillator layer between a semiconductor photodetecting element layer constituting a radiation incident plane and a semiconductor photodetecting element layer facing said layer thereby increasing radiation detection output. CONSTITUTION:A silicon photodiode layer 1A of about 0.3mm. thickness constituting an X-ray incident plane is constituted of a p type semiconductor layer 11A and an n type semiconductor layer 12A. On the other hand, a photodiode layer 1B facing the layer 1A is constituted of a p type semiconductor layer 11B and an n type semiconductor layer 12B. A scintillator layer 2 consisting of NaI(Tl), CdWO4, etc. held by the layers 12A and the layer 12B is sandwiched between the layers 1A and 1B and a protective film 3 of Al, etc. is provided on the side face of the layer 2 so as to shield visible light from the outside. A photodiode may be further provided after the scintillator layer is sandwiched between the layers 1A and 1B. The radiation detection output is thus increased and the formation of a sharper tomographic (CT) image or the like is made possible. |
