| 摘要 |
<p>PURPOSE:To contrive not to scatter any of semiconductor laser chips after being divided by a method wherein rectangular semiconductor laser wafers formed by cleaving and dividing a semiconductor laser wafer are scribed, and after that, the wafers are adhered on a sticky sheet, and at the same time, are covered with a thin sheet and divided. CONSTITUTION:Rectangular semiconductor laser wafers 1 are scribed, and after that, the wafers 1 are adhered on a thin sticky sheet 2 and are covered with a thin sheet 3 like cellophane. Then, the wafers 1 are wound around a circular cylinder 4 having a constant temperature, while tensions T and T are being applied to both ends of the two sheets, and the wafers 1 are divided. The sheets are stretched by the temperature of the circular cylinder 4 and the tensions T and T, and semiconductor laser chips 6 have an interval in a straight-line state between each of them, after being divided. Any of the divided chips 6 doesn't scatter by the sheet 2.</p> |
