发明名称 PREPARATION OF ONE DIRECTIONAL SILICON STEEL PLATE
摘要 PURPOSE:To impart excellent magnetic characteristics, in applying intermediate annealing to a silicon steel slab containing a specific amount of C, Si, Mn and one or more of S and Se before final cold rolling, by imparting an AC magnetic field with a specific value or more in the recrystallization initial stage thereof. CONSTITUTION:On a wt% basis, 0.025-0.1 C, 2.5-4 Si, 0.02-0.15 Mn and 0.003-0.08 one or more of S and Se are contained in a silicon steel slab. This steel slab is hot rolled and two times of cold rollings interposing intermediate annealing at 750-1,100 deg.C are applied to the hot rolled plate and a draft in the final cold rolling among two times of cold rollings is set to 40-80% to obtain a predetermined plate thickness. This cold rolled plate is subjected to decarburizing annealing and final annealing to obtain a one directional silicon steel plate. In performing intermediate annealing before final cold rolling, an AC magnetic field with 100 oersted or more is applied to the steel plate in parallel to the rolling direction thereof at the initial stage of recrystallization.
申请公布号 JPS6046319(A) 申请公布日期 1985.03.13
申请号 JP19830152667 申请日期 1983.08.22
申请人 KAWASAKI SEITETSU KK 发明人 IWAMOTO KATSUO;IIDA YOSHIAKI
分类号 C22C38/00;C21D1/04;C21D8/12;H01F1/16 主分类号 C22C38/00
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