| 摘要 |
<p>A diffusion bonding press (10) and method are provided for thermocompression diffusion bonding structured copper strain buffers (55, 65) directly to one or each of the two major opposed surfaces (70a, 70b) of a substrateless semiconductor device wafer (70) having a first metal coating (94, 96) of titanium, chromium or nickel and a layer (98, 100) of copper, silver or gold. The expensive tungsten or molybdenum support plate conventionally employed to provide structural integrity to the relatively fragile semiconductor device wafer is thus eliminated. The wafer may have a passivated beveled outer edge surface (70c) prior to bonding. A selected portion of each structured copper strain buffer is diffusion bonded to the semiconductor device wafer while subjecting the wafer only to substantially compressive force, thus avoiding wafer fracture during the bonding process. The structured copper strain buffers may further have lateral extents no greater than the lateral extent of the respective semiconductor device wafer surface in contact therewith, allowing the beveled surface to be cleaned and passivated after attachment of the strain buffers to the wafer via diffusion bonding. When only one buffer (55 or 65) is bonded to the wafer, a rigid member, such as quartz, may be interposed between the plate of the press and the noncoated surface of the wafer.</p> |
