| 摘要 |
PURPOSE:To inexpensively perform the improvement of a photoelectric conversion rate in a simple operation by decreasing or increasing in average the density ratio of mixture gas for forming a semiconductor layer in response to the type of the mixture gas proportionally to the thickness of a semiconductor layer to be formed. CONSTITUTION:A P type semiconductor layer P1, an I type semiconductor layer IL, an N type semiconductor layer N1, a P type semiconductor layer P2, an I type semiconductor layer IM, an N type semiconductor layer N2, a P type semiconductor layer P3, an I type semiconductor layer IS and an N type semiconductor layer N3, and a transparent conductive film 2 are laminated on a substrate 1 to manufacture a photovoltaic element. When the layer IL is formed in the step, the density ratio of GaH4 is decreased in average from approx. 95% to 0% unitl the thickness of the semiconductor layer reaches 7,000Angstrom to form a semiconductor layer. When the layer IS is formed, the density ratio SiH4 is increases in average from 0% to 90% until the thickness of the semiconductor layer reaches 700Angstrom , thereby forming the semiconductor layer. |
